SIMULATING CURRENT - VOLTAGE CHARACTERISTICS OF MOLECULAR TRANSISTOR FIELD EFFECT TRANSISTOR
نویسندگان
چکیده
منابع مشابه
Improved drain current characteristics of tunnel field effect transistor with heterodielectric stacked structure
In this paper, we proposed a 2-D analytical model for electrical characteristics such as surface potential, electric field and drain current of Silicon-on-Insulator Tunnel Field Effect Transistor (SOI TFETs) with a SiO2/High-k stacked gate-oxide structure. By using superposition principle with suitable boundary conditions, the Poisson’s equation has been solved to model the channel r...
متن کاملJunction Field Effect Transistor (JFET)
The single channel junction field-effect transistor (JFET) is probably the simplest transistor available. As shown in the schematics below (Figure 6.13 in your text) for the n-channel JFET (left) and the p-channel JFET (right), these devices are simply an area of doped silicon with two diffusions of the opposite doping. Please be aware that the schematics presented are for illustrative purposes...
متن کاملSubmicrometer Polymer Field - Effect Transistor
Recent developments towards future polymer electronics are aimed at different applications as organic displays, complementary circuits, and all-polymer integrated circuits [1-3]. Basic devices are organic field-effect transistors (OFET, cross section in Figs.2 and 3) with an active layer made from an organic material. Until now the achieved performance of OFET's is not sufficient for envisaged ...
متن کاملNonballistic spin-field-effect transistor.
We propose a spin-field-effect transistor based on spin-orbit coupling of both the Rashba and the Dresselhaus types. Different from earlier proposals, spin transport through our device is tolerant against spin-independent scattering processes. Hence the requirement of strictly ballistic transport can be relaxed. This follows from a unique interplay between the Dresselhaus and the Rashba couplin...
متن کاملResonant subgap current transport in Josephson field effect transistor
We study theoretically the current-voltage characteristics (IVCs) of the Josephson field effect transistor—a ballistic SNINS junction with superconducting (S) electrodes confining a planar normal-metal region (N), which is controlled by the gate-induced potential barrier (I). Using the computation technique developed earlier for long single-channel junctions in the coherent multiple Andreev ref...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Science and Technology Development Journal
سال: 2009
ISSN: 1859-0128
DOI: 10.32508/stdj.v12i13.2389